CROISSANCE DE INP, GAINAS ET GAINASP PAR LA METHODE DES ORGANOMETALLIQUES SOUS PRESSION REDUITERAZEGHI M.1983; REVUE TECHNIQUE THOMSON-CSF; ISSN 0035-4279; FRA; DA. 1983; VOL. 15; NO 1; PP. 59-86; ABS. ENG; BIBL. 16 REF.Article

Recent advances of terahertz quantum cascade lasersRAZEGHI, M.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 8119, issn 0277-786X, isbn 978-0-8194-8729-2, 81190D.1-81190D.6Conference Paper

Overview of antimonide based III-V semiconductor epitaxial layers and their applications at the center for quantum devicesRAZEGHI, M.EPJ. Applied physics (Print). 2003, Vol 23, Num 3, pp 149-205, issn 1286-0042, 57 p.Article

Croissance et caractérisation de l'hétérojonction et de structures à puits quantiques GaInAs-InP obtenues par MOCVD = Growth and characterization of the heterojonction and quantum well of GaInAs-InP obtained by LP-MOCVDRAZEGHI, M.Revue technique - Thomson-CSF. 1984, Vol 16, Num 1, pp 5-27, issn 0035-4279Article

THE DETERMINATION OF MICROIMPURITIES IN QUARTZ SAMPLES BY THE RADIOACTIVATION METHOD OF ANALYSISRAZEGHI M; PARSA B.1973; RADIOCHEM. RADIOANAL. LETTERS; SWITZ.; DA. 1973; VOL. 13; NO 2; PP. 95-100; BIBL. 6 REF.Serial Issue

Recent advances in III-V compounds on siliconRAZEGHI, M.Progress in crystal growth and characterization. 1989, Vol 19, Num 1-2, pp 21-37, issn 0146-3535Article

EPR STUDY OF GD³⁺ AROUND THE FERROELASTIC TRANSITION POINT OF PB₃(PO₄)₂RAZEGHI M; HOULIER B.1978; PHYS. STATUS SOLIDI, B; DDR; DA. 1978; VOL. 89; NO 2; PP. K135-K137; BIBL. 2 REF.Article

Terahertz emitters, receivers, and applications II (21 August 2011, San Diego, California, United States)Razeghi, M.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 8119, issn 0277-786X, isbn 978-0-8194-8729-2, 1 vol, isbn 978-0-8194-8729-2Conference Proceedings

NEUTRON ACTIVATION ANALYSIS OF AN IRANIAN CIGARETTE AND ITS SMOKE.ABEDINZADEH Z; RAZEGHI M; PARSA B et al.1977; J. RADIOANAL. CHEM.; SWITZ.; DA. 1977; VOL. 35; NO 2; PP. 373-376; BIBL. 8 REF.Article

DETERMINATION OF TRACE ELEMENTS IN CIGARETTE PAPER BY NEUTRON ACTIVATION ANALYSIS.ABEDINZADEH Z; RAZEGHI M; KHALKHALI Z et al.1976; RADIOCHEM. RADIOANAL. LETTERS; SWITZ.; DA. 1976; VOL. 27; NO 1; PP. 35-42; BIBL. 8 REF.Article

EPR INVESTIGATION OF GD³⁺ AND EU²⁺ IN THE ALPHA - AND BETA -PHASES OF LEAD PHOSPHATERAZEGHI M; BUISSON JP; HOULIER B et al.1979; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1979; VOL. 95; NO 1; PP. 283-289; ABS. FRE; BIBL. 5 REF.Article

EPR STUDY OF MN²⁺ AROUND THE FERROELASTIC TRANSITION POINT OF PB₃(PO₄)₂RAZEGHI M; HOULIER B; YUSTE M et al.1978; SOLID STATE COMMUNIC.; GBR; DA. 1978; VOL. 26; NO 10; PP. 665-668; BIBL. 7 REF.Article

Biosensing II (4-6 August 2009, San Diego, California, United States)Razeghi, M; Mohseni, Hooman.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7397, issn 0277-786X, isbn 978-0-8194-7687-6 0-8194-7687-0, 1Vol, various pagings, isbn 978-0-8194-7687-6 0-8194-7687-0Conference Proceedings

Biosensing III (1-3 August 2010, San Diego, California, United States)Mohseni, Hooman; Razeghi, M.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7759, issn 0277-786X, isbn 978-0-8194-8255-6, 1 vol, isbn 978-0-8194-8255-6Conference Proceedings

Investigation of the heteroepitaxial interfaces in the GaInP/GaAs superlattices by high-resolution x-ray diffractions and dynamical simulationsXIAOGUANG HE; RAZEGHI, M.Journal of applied physics. 1993, Vol 73, Num 7, pp 3284-3290, issn 0021-8979Article

Optical investigations of GaAs-GalnP quantum wells grown on the GaAs, InP, and Si substratesXIAOGUANG HE; RAZEGHI, M.Applied physics letters. 1992, Vol 61, Num 14, pp 1703-1706, issn 0003-6951Article

QUANTUM OSCILLATIONS AT A GA_0.47IN_0.53AS-INP HETEROJUNCTION INTERFACENICOLAS RJ; BRUMMELL MA; PORTAL JC et al.1982; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1982; VOL. 43; NO 11; PP. 825-828; BIBL. 25 REF.Article

Stranski―Krastanov growth of InGaN quantum dots emitting in green spectraBAYRAM, C; RAZEGHI, M.Applied physics. A, Materials science & processing (Print). 2009, Vol 96, Num 2, pp 403-408, issn 0947-8396, 6 p.Article

GaAs-GaInP multilayers for high performance electronic devicesOMNES, F; RAZEGHI, M.Revue technique - Thomson-CSF. 1991, Vol 23, Num 3, pp 571-583, issn 0035-4279Article

LOW PRESSURE METALORGANIC CHEMICAL VAPOR DEPOSITION OF INP AND RELATED COMPOUNDSRAZEGHI M; POISSON MA; LARIVAIN JP et al.1983; JOURNAL OF ELECTRONIC MATERIALS; ISSN 0361-5235; USA; DA. 1983; VOL. 12; NO 2; PP. 371-395; BIBL. 29 REF.Article

Kinetics of quantum states in quantum cascade lasers : device design principles and fabricationRAZEGHI, M.Microelectronics journal. 1999, Vol 30, Num 10, pp 1019-1029, issn 0959-8324Article

Temperature effects in terahertz step well quantum cascade structures with diagonal optical transitionsFREEMAN, Will; KARUNASIRI, Gamani.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 8119, issn 0277-786X, isbn 978-0-8194-8729-2, 81190A.1-81190A.7Conference Paper

Quantum sensing and nanophotonic devices VI (25-28 January 2009, San Jose, California, United States)Razeghi, M; Sudharsanan, Rengarajan; Brown, Gail J et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7222, issn 0277-786X, isbn 978-0-8194-7468-1 0-8194-7468-1, 1Vol, various pagings, isbn 978-0-8194-7468-1 0-8194-7468-1Conference Proceedings

Inertial microfluidics for flow cytometryDI CARLO, Dino.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7759, issn 0277-786X, isbn 978-0-8194-8255-6, 77590K.1-77590K.6Conference Paper

Carbon nanotubes, graphene, and associated devices II (5-6 August 2009, San Diego, California, United States)Razeghi, M; Pribat, Didier; Lee, Young Hee et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7399, issn 0277-786X, isbn 978-0-8194-7689-0 0-8194-7689-7, 1Vol, various pagings, isbn 978-0-8194-7689-0 0-8194-7689-7Conference Proceedings